SKW25N120 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKW25N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower E_off compared to previous generation
• Short circuit withstand time – 10 µs
C
• Designed for:
- Motor controls
- Inverter
- SMPS
G
E
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹ for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
PG-TO-247-3-21
(TO-247AC)
Type
SKW25N120
V_CE
I_C
1200V 25A
E_off
2.9mJ
T_j
Marking Package
150°C K25N120 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²
V_GE = 15V, 100V≤V_CC ≤1200V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j , T_stg
T_s
Value
Unit
1200
V
A
46
25
84
84
42
25
80
±20
V
10
µs
313
W
-55...+150
°C
260
1 _{J-STD-020 and JESD-022}
2 _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2_1 Apr 06