SKW25N120 Datasheet, PDF (8/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKW25N120
20V
C_iss
15V
1nF
10V
U_CE=960V
5V
0V
0nC
100nC
200nC
300nC
Q_GE, GATE CHARGE
Figure 17. Typical gate charge
(I_C = 25A)
C_oss
100pF
0V
C_rss
10V
20V
30V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V_GE = 0V, f = 1MHz)
30µs
500A
25µs
20µs
15µs
10µs
5µs
400A
300A
200A
100A
0µs
10V 11V 12V 13V 14V 15V
V_GE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V_CE = 1200V, start at T_j = 25°C)
0A
10V 12V 14V 16V 18V 20V
V_GE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V≤V_CE ≤1200V, T_C = 25°C, T_j ≤ 150°C)
Power Semiconductors
8
Rev. 2_1 Apr 06