SKW25N120 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKW25N120
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_F
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=800V,I_C=25A,
V_GE=15/0V,
R_G=22Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=800V, I_F=25A,
di_F/dt=650A/µs
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
45
40
730
30
2.2
1.5
3.7
90
1.0
20
470
Unit
max.
60 ns
52
950
39
2.9 mJ
2.0
4.9
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_F
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=150°C
V_CC=800V,I_C=25A,
V_GE=15/0V,
R_G=22Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_R=800V, I_F=25A,
di_F/dt=750A/µs
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
50
36
820
42
3.8
2.9
6.7
280
4.3
32
130
Unit
max.
60 ns
43
990
50
4.6 mJ
3.8
8.4
ns
µC
A
A/µs
1) _{Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.}
Power Semiconductors
3
Rev. 2_1 Apr 06