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| SKW25N120 Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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SKW25N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction â case
Diode thermal resistance,
junction â case
Thermal resistance,
junction â ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
Unit
0.4
K/W
1.15
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
.
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V,
IC=1500µA
VGE = 15V, IC=25A
Tj=25°C
Tj=150°C
VGE=0V, IF=25A
Tj=25°C
Tj=150°C
IC=1000µA,
VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=25A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
Measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=25A
VGE=15V
VGE=15V,tSCâ¤10µs
100Vâ¤VCCâ¤1200V,
Tj ⤠150°C
min.
1200
2.5
-
-
3
-
-
-
-
-
-
-
-
-
Value
typ.
-
3.1
3.7
2.0
1.75
4
-
-
-
20
2150
260
110
225
13
240
Unit
max.
-V
3.6
4.3
2.5
5
µA
350
1400
100 nA
-S
2600 pF
310
130
300 nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s
Power Semiconductors
2
Rev. 2_1 Apr 06
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