SKW25N120 Datasheet, PDF (10/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKW25N120
80A
60A
T_J=150°C
40A
T_J=25°C
20A
0A
0V
1V
2V
3V
4V
V_F, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
3.0V
I_F=50A
2.5V
2.0V
I_F=25A
1.5V
I_F=12A
1.0V
0.5V
0.0V
0°C
40°C
80°C 120°C
T_j, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as
a function of junction temperature
10⁰K/W
D=0.5
0.2
0.1
10^-1K/W 0.05
0.02
0.01
R,(K/W)
0.05339
0.40771
0.22473
0.46420
R1
τ, (s)
0.30438
0.09698
0.00521
0.00042
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10^-2K/W
10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t_p / T)
Power Semiconductors
10
Rev. 2_1 Apr 06