PTFB210801FA Datasheet, PDF (9/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB210801FA
Reference Circuit (cont.)
Components Information
Component
Description
Input
C101, C103
C102, C105
C104
C801, C802, C803
L1, L2
R101, R103, R104
Capacitor, 10 μF
Chip capacitor, 15 pF
Chip capacitor, 1.5 pF
Capacitor, 1000 pF
Inductor, 22 nH
Resistor, 10 Ω
R102, R804
R801
R802
R803
S1, S2
S3
S4
S5
Resistor, 2000 Ω
Resistor, 3000 Ω
Resistor, 1300 Ω
Resistor, 1200 Ω
EMI Suppression Capacitor
Potentiometer, 2k Ω
Voltage Regulator
Transistor
Output
C201, C203
C202, C211
C204, C212
C205, C210
C206, C207
C208
C209
Capacitor, 10 μF
Chip capacitor, 4.71 μF
Chip capacitor, 18 pF
Capacitor, 22 μF
Chip capacitor, 2.7 pF
Chip capacitor, 2.2 pF
Chip capacitor, 15 pF
Suggested Manufacturer
Digi-Key
ATC
ATC
Digi-Key
Coilcraft
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
P/N
490-4393-2-ND
800A150GT
800A1T5GR
PCC1772CT-ND
0805CS-220X_BG
P10GCT-ND
P2.0KECT-ND
P3.0KECT-ND
P1.3KGECT-ND
P1.2KGECT-ND
NFM18PS105R0J3D
3224W-202ECT-ND
LM7805
BCP56
Digi-Key
ATC
ATC
Digi-Key
ATC
ATC
ATC
587-1818-2-ND
490-1864-2-ND
800A180JT
PCE4444TR-ND
800A2R7BT
800A2R2BT
800A150GT
Data Sheet
9 of 11
Rev. 01.1, 2016-06-14