PTFB210801FA Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB210801FA
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 750 mA
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 80 W CW)
Ordering Information
Type and Version
PTFB210801FA V1 R0
PTFB210801FA V1 R250
Order Code
PTFB210801FAV1R0XTMA1
PTFB210801FAV1R250XTMA1
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.05
3.0
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_qJC
65
–6 to +10
200
–40 to +150
0.50
Unit
V
V
°C
°C
°C/W
Package Description
H-37265-2, earless flange
H-37265-2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 11
Rev. 01.1, 2016-06-14