PTFB210801FA Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB210801FA
Thermally-Enhanced High Power RF LDMOS FET
80 W, 28 V, 2110 – 2170 MHz
Description
The PTFB210801FA LDMOS FET is designed for use in multi-stand-
ard cellular power amplifier applications in the 2110 to 2170 MHz
frequency band. Features include input and output matching,
high gain and thermally-enhanced packages with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB210801FA
Package H-37265-2
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 750 mA,
ƒ = 2140 MHz, 10 MHz Spacing, 8dB PAR
-15
45
Adj Lower
-20
40
Adj Upper
-25
Alt
35
-30
Efficiency
30
25
-35
20
-40
15
-45
10
-50
5
36 37 38 39 40 41 42 43 44 45 46 47 48
Output Power (dBm)
Features
• Broadband internal matching
• Typical single-carrier WCDMA performance at
2170 MHz, 28 V
- Average output power = 25 W
- Linear Gain = 18.5 dB
- Efficiency = 32.5%
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P_1dB = 80 W
- Efficiency = 55%
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 28 V,
80 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 750 mA, P_OUT = 20 W average, ƒ₁ = 2160 MHz, ƒ₂ = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
18
18.5
—
dB
hD
28
31
—
%
Intermodulation Distortion
IMD
—
–30
–28
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 01.1, 2016-06-14