PTFB210801FA Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB210801FA
Typical Performance (cont.)
CW Sweep at P_1dB vs. Frequency
V_DD = 28 V, I_DQ = 750 mA, T = 25°C
20
60
19.5
55
19
50
Gain
18.5
45
18
40
17.5
35
17
Efficiency
2110 MHz
30
2140 MHz
16.5
2170 MHz
25
16
20
39 40 41 42 43 44 45 46 47 48 49 50 51
Output Power (dBm)
Broadband Circuit Impedance
CW Performance at Various I_DQ
ƒ = 2170 MHz
V_DD = 28 V, I_DQ = Varying
19
18.5
18
17.5
620mA
720mA
820mA
920mA
17
39 40 41 42 43 44 45 46 47 48 49 50 51
Average Output Power (dBm)
Z Source
D
Z Load
G
S
Frequency
MHz
2110
2140
2170
Z Source W
R
jX
16.3
–4.6
13.6
–4.0
11.3
–2.9
Z Load W
R
jX
2.2
–4.1
2.3
–4.1
2.2
–4.4
Data Sheet
4 of 11
Rev. 01.1, 2016-06-14