PTFB210801FA Datasheet, PDF (10/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB210801FA
Package Outline Specifications
45° X 2.03
[.080]
2X 7.11
[.280]
6. ALL FOUR
CORNERS
Package H-37265-2
D
2.66±.51
[.105±.020]
FLANGE
9.78
[.385]
3.05
[.120]
45° X 2.03
CL ^[.080]
S
2X 7.11
[.280]
6. ALL FOUR
CLIODRNERS
10.16±.25
[.400±.010]
15.49±.51
[.610±.020]
2X R1.52
[R.060]
FLANGE
[R4.0X2R50] ^{.M63AX1[.04.0106]}
CL
D
G
CL
15.23
[.600]
2.66±.51
[.105±.020]
LID
10.16±.25
[.400±.010]
4[XR.R_[0^1.1₆₆⁵.₁₀^.5⁴⁰_]2^{9±±.0.5210]}
SPH 1.57
[.062]
4X R0.63
[R.025] MAX
1.02
[.040]
SPH 1.57
[.062]
1.02
[.040]
S
10.16±.25
[.400±.010]
G
CL
3.61±.38
[.142±.015]
h-36265-2_po_09-08-2011
20.31
[.800]
6.
10.16±.25
[.400±.010]
H-37265-2_01_po_01-25-2013
3.61±.38
[.142±.015]
10.16
[.400]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
Di₃a_.gra_Am_{ll t}N_olo_et_re_as_n—_ceu_snl_±e₀s_.s₁₂o₇th_[e₀r_.w₀₀is₅e_] s_up_ne_lec_sif_sie_sd_p: _{ecified otherwise.}
4. P¹in^. s:^ID^nte–^rpd^rr^ea^tin^d;ⁱG^me–ⁿg^sa^iotⁿe^s; S^an–^ds^to^ou^lerc^rae^{nces per ASME Y14.5M-1994.}
5. L²e^.ad^Pth^rii^mck^an^re^ys^dsⁱ:^m0^e.1ⁿ0^si+^on0^s.0^a5^r1^e/–^m0^m.0^.2^A5^ltm^erm^na[^t0^e.0^d0^im4^e+ⁿ0^si.^o0ⁿ0^s2/^a–^r0^e.0ⁱⁿ0^c1^hi^en^sc^.h].
6. E³x^.po^Ase^lld^tom^lee^rt^aaⁿl^cp^ela^sn^±e⁰o^.n¹²to⁷p^[.a⁰n⁰d^5]b^uoⁿtt^leo^sm^s o^sf^pc^ee^cr^ifa^iem^dic^oi^tn^hs^eu^rwlaⁱt^so^er.^.
7. G⁴o^.ld ^Ppⁱlⁿa^sti^:n^Dg t⁼hi^dc^rk^anⁱeⁿs^, s^S: ⁼1.1^so4^u±^rc0^e.^,3^G8 m⁼ i^gcr^ao^ten^.[45 ± 15 microinch].
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Exposed metal plane on top and bottom of ceramic insulator.
7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
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http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 01.1, 2016-06-14