PTFB210801FA Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB210801FA
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA vs. Frequency
V_DD = 28 V, I_DQ = 750 mA,
10 MHz Spacing, PAR = 8 dB
Adj 2110 MHz
-15
Adj 2170 MHz
45
Alt 2110 MHz
-20
Alt 2170 MHz
40
-25
Eff. 2110 MHz
35
Eff. 2170 MHz
30
-30
25
-35
20
-40
15
-45
10
-50
5
36 37 38 39 40 41 42 43 44 45 46 47 48
Output Power (dBm)
Single Side Small Signal CW
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 750 mA
20.0
0
19.0
Gain
18.0
-5
17.0
-10
16.0
15.0
-15
14.0
13.0
IRL
-20
12.0
-25
11.0
10.0
-30
1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
Frequency (GHz)
CW Performance vs. Temperature
V_DD = 28 V, I_DQ = 750 mA, ƒ = 2140 MHz
19.5
60
Gain
19.0
55
18.5
50
45
18.0
40
17.5
35
17.0
Efficiency
-25 ° C
30
16.5
25° C
25
85° C
16.0
20
39 40 41 42 43 44 45 46 47 48 49 50 51
Output Power (dBm)
CW Gain & Efficiency
vs. Output Power & VDD
ƒ = 2140 MHz, I_DQ = 750 mA
20.0
60
19.5
50
19.0
40
18.5
30
18.0
20
17.5
V_DD = 30 V
10
V_DD = 28 V
17.0
0
39 40 41 42 43 44 45 46 47 48 49 50 51
Output Power (dBm)
Data Sheet
3 of 11
Rev. 01.1, 2016-06-14