 English |
|
|
|
|
|
|
|
| PTFB091507FH Datasheet, PDF (9/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz | |||
| |||
| ◁ |
PTFB091507FH
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Microstrip
TL215
TL216
TL217
TL218
TL219
TL220
TL221
TL222
TL223
TL228
TL230
TL231
TL232
TL233
TL234
TL235
TL236
TL237
TL238
TL239
TL240
Characteristics
0.021 ï¬, 20.9 ï
0.041 ï¬, 20.9 ï
0.008 ï¬, 39.1 ï
0.016 ï¬, 16.5 ï
0.011 ï¬, 39.1 ï
0.016 ï¬, 20.9 ï
0.037 ï¬, 5.7 ï
0.016 ï¬, 16.5 ï
0.011 ï¬, 5.7 ï
0.021 ï¬, 16.5 ï
0.006 ï¬, 51.5 ï
0.060 ï¬, 51.5 ï
0.027 ï¬, 51.5 ï
0.006 ï¬, 51.5 ï
0.041 ï¬, 20.9 ï
0.010 ï¬, 51.5 ï
0.014 ï¬, 20.9 ï
0.052 ï¬, 5.7 ï
0.021 ï¬, 16.5 ï
0.021 ï¬, 20.9 ï
0.007 l, 20.9 W
Dimensions: mm
W1 = 3.81, W2 = 3.81, W3 = 3.81
W = 3.81, L = 7.29
W = 1.68, L = 1.52
W = 5.08, L = 2.90
W = 1.68, L = 2.03
W1 = 3.81, W2 = 3.81, W3 = 2.79
W = 16.51, L = 6.38
W = 5.08, L = 2.89
W1 = 16.51, W2 = 1.83, W3 = 16.51,
W4 = 1.83
W1 = 5.08, W2 = 5.08, W3 = 3.81
W = 1.10, L = 1.14
W = 1.10, L = 11.3
W = 1.10, L = 5.08
W = 1.10, L = 1.12
W = 3.81, L = 7.29
W1 = 1.10, W2 = 1.10, W3 = 1.91
W = 3.81, L = 2.51
W = 16.51, L = 8.89
W1 = 5.08, W2 = 5.08, W3 = 3.81
W1 = 3.81, W2 = 3.81, W3 = 3.81
W1 = 3.81, W2 = 3.81, W3 = 1.27
Dimensions: mils
W1 = 150, W2 = 150, W3 = 150
W = 150, L = 287
W = 66, L = 60
W = 200, L = 114
W = 66, L = 80
W1 = 150, W2 = 150, W3 = 110
W = 650, L = 251
W = 200, L = 114
W1 = W1, W2 = 72, W3 = 650,
W4 = 72
W1 = 200, W2 = 200, W3 = 150
W = 44, L = 45
W = 44, L = 445
W = 44, L = 200
W = 44, L = 44
W = 150, L = 287
W1 = 44, W2 = 44, W3 = 75
W = 150, L = 99
W = 650, L = 350
W1 = 200, W2 = 200, W3 = 150
W1 = 150, W2 = 150, W3 = 150
W1 = 150, W2 = 150, W3 = 50
Data Sheet â DRAFT ONLY
9 of 13
Rev. 03, 2011-03-14
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese