PTFB091507FH Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz

PTFB091507FH
Confidential, Limited Internal Distribution
Typical Performance (data taken in Infineon test fixture)
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 63 W
60
0
Input Return Loss
50
-10
40 ^Efficiency
-20
30
20
Gain
10
840
-30
IMD3
-40
890
940
990
Frequency (MHz)
-50
1040
Two-tone Drive-up
V_DD = 28 V, I_DQ = 2.4 A,
ƒ1 = 960 MHz, ƒ2 = 959 MHz
-20
-30
-40
-50
-60
38
Efficiency
IMD 3rd Order
40 42 44 46 48
Output Power, PEP (dBm)
50
45
40
35
30
25
20
15
10
50
Two-tone Drive-up
V_DD = 28 V, I_DQ = 1.2 A,
ƒ1 = 960 MHz, ƒ2 = 959 MHz
21.0
50
20.5 ^Gain
40
20.0
30
19.5
Efficiency
20
19.0
38
40 42 44 46 48
Output Power, PEP (dBm)
10
50
Two-tone Drive-up at
Selected Frequencies
V_DD = 28 V, I_DQ = 1.2 A, tone spacing = 1 MHz
-20
960 MHz
-30
940 MHz
920 MHz
-40
-50
-60
42
44
46
48
50
52
Output Power, PEP (dBm)
Data Sheet – DRAFT ONLY
3 of 13
Rev. 03, 2011-03-14