PTFB091507FH Datasheet, PDF(11/13 Page) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz

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PTFB091507FH Datasheet, PDF (11/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz

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Confidential, Limited Internal Distribution

Reference Circuit (cont.)

Component

C214

C215

C216, C218

C219, C223

C801, C803, C804

C802, 805

R101

R102

R103

R801

R802

R803, R805

R804

Description

Capacitor, 10 nF

Chip capacitor, 1 pF

Chip capacitor, 1 ÂµF

Tantalum capacitor, 10 ÂµF, 35 V

Chip capacitor, 1 nF

Chip capacitor, 100 nF

Resistor, 10 ï

Resistor, 5.1 ï

Resistor, 10 ï

Resistor, 1.3k ï

Resistor, 1.2k ï

Resistor, 10 ï

Resistor, 2k ï

Transistor

Potentiometer, 2k ï

Voltage regulator

Suggested Supplier

ATC

Digi-Key

Garrett Electronics

Digi-Key

See package outline speciï¬cations on next page

PTFB091507FH

P/N or Comment

ATC200B103MW50XC

ATC100B1R0CW500XB

478-3993-2-ND

281M5002106K

PCC1772CT-ND

PCC104BCT-ND

P10ECT-ND

P5.1KECT-ND

P10ECT-ND

P1.3KGCT-ND

P1.2KGCT-ND

P10ECT-ND

P2.0KECT-ND

BCP5616-ND

3224W-202ECT-ND

LM78L05ACM-ND

Data Sheet â DRAFT ONLY

11 of 13

Rev. 03, 2011-03-14

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