PTFB091507FH Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz

PTFB091507FH
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 70 W avg, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Gps
19.5
20
D
43.5
45
Intermodulation Distortion
IMD
—
–30
DC Characteristics
Max
—
—
–28
Unit
dB
%
dBc
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Maximum Ratings
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.2 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.5
—
Typ
—
—
—
0.05
3.9
—
Max
—
1.0
1.0
—
4.5
1.0
Unit
V
µA
µA
Ω
V
µA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Ordering Information
Type and Version
Package Outline
PTFB091507FH V1
H-34288-4/2
PTFB091507FH V1 R250 H-34288-4/2
Symbol
V_DSS
V_GS
T_J
T_STG
R_θJC
Value
65
–6 to +10
200
–40 to +150
0.31
Unit
V
V
°C
°C
°C/W
Package Description
Ceramic open-cavity, earless flange
Ceramic open-cavity, earless flange
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet – DRAFT ONLY
2 of 13
Rev. 03, 2011-03-14