PTFB091507FH Datasheet, PDF (12/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz

PTFB091507FH
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-34288-4/2
45° X 2.032
[45° X .080]
2X 30°
V
22.860
[.900]
CL
D
2X 5.080
[.200]
2X 1.143
[.045]
V
4.889±.510
[.192±.020]
CL
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
4X R0.508+-.1.32871
[ ] ^{R.020+-.0.00155}
G
2X 12.700
[.500]
22.352±.200
[.880±.008]
4.039+-.1.22574
[ ] ^{.159+-.0.00150}
1.575
[.062] (SPH)
1.016
[.040]
CL
23.114
[.910]
C 66065A- 0003- C743- 010- 027 H- 34288- 42_ d. wg
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±0.127 [.005] unless specified otherwise.
4. Pins: D - drain; S - source; G - gate; V - V_DD.
5. Lead thickness: 0.10 +0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet – DRAFT ONLY
12 of 13
Rev. 03, 2011-03-14