PTFB091507FH Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion
V_DD = 28 V, I_DQ = 1.2 A,,
ƒ1 = 960 MHz, ƒ2 = 959 MHz
-25
3rd Order
-35
5th
7th
-45
-55
-65
41 43 45 47 49 51 53
Output Power, PEP (dBm)
PTFB091507FH
Single-carrier WCDMA 3GPP Drive-up
960 MHz
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
-15
50
Efficiency
-25
40
-35
30
-45
-55
42
ACP Low
ACP Up
44
46
48
Average Output Power (dBm)
20
10
50
Single-carrier WCDMA Drive-up
960 MHz
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
20
60
PAR*
0
45
Efficiency
-20
30
-40
ACPR
Gain ¹⁵
-60
0
42
44
46
48
50
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
960 MHz
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
20
8
0
PAR* ⁶
-20
4
-40
ACPR
-60
42
44
46
48
Average Output Power (dBm)
2
0
50
*Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve
Data Sheet – DRAFT ONLY
4 of 13
Rev. 03, 2011-03-14