PTFA261301E Datasheet, PDF (9/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz

Reference Circuit (cont.)
PTFA261301E
PTFA261301F
R5 C5
R4
R3
C1
C3
LM
C4 R2
R1
R6 R7 C6
Q1
VDD
QQ1
C2
C7
C8 C9
C10
C11
C13
L1 _VDD
C12
C18 ^C19
C16
C17
VDD
L2
C15
C14
R5C5 R3
C1
R4 C3
LM
C4 _R1R2
R6 R7 C6
Q1
VDD
QQ1
C2
C7
A 261301ef_dtl
A261301in_01
A261301out_01
A 2 6 1 3 0 1 e f_ a s0y- 5 -0 9 -3 0
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3
C4
C5, C12, C16
C6, C8, C10,
C14, C19
C7
C9
C11, C15
C13, C17
C18
L1, L2
Q1
QQ1
R1
R2
R3
R4
R5, R7
R6
Description
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Ceramic capacitor, 4.5 pF
Ceramic capacitor, 0.7 pF
Ceramic capacitor, 1.0 pF
Capacitor, 1.0 µF
Tantalum capacitor, 10 µF, 50 V
Ceramic capacitor, 0.5 pF
Ferrite, 8.9 mm
Transistor
Voltage regulator
Chip resistor, 1.2 k-ohms
Chip resistor, 1.3 k-ohms
Chip resistor, 2 k-ohms
Potentiometer, 2 k-ohms
Chip resistor, 5.1 k-ohms
Chip resistor, 10 ohms
Suggested Supplier
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
ATC
Toshiba
Garrett Electronics
ATC
Elna Magnetics
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
*Gerber Files for this circuit available on request
Data Sheet
9 of 12
P/N or Comment
PCC1772CT-ND
366-1655-2-ND
PCC104BCT-ND
100B 4R5
100B 0R7
100B 1R0
C4532XTRZA105M
TPS106K050R0400
100B 0R5
BDS 4.6/3/8.9-4S2
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
3224W-202ETR-ND
P5.1KECT-ND
P10ECT-ND
Rev. 07, 2007-04-04