PTFA261301E Datasheet, PDF (5/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz

Typical Performance (cont.)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 1.4 A, ƒ = 2680 MHz
16
15
14
13
12
11
10
35
Gain
Efficiency
40
45
50
Output Power (dBm)
60
50
40
30
20
10
0
55
PTFA261301E
PTFA261301F
Gain & Efficiency vs. Output Power
V_DD = 32 V, I_DQ = 1.4 A, ƒ = 2680 MHz
16
15
14
13
12
11
10
35
Gain
Efficiency
40
45
50
Output Power (dBm)
60
50
40
30
20
10
0
55
2-Tone Performance
Gain, Efficiency & RL vs. Frequency
V_DD = 28 V, I_DQ = 1.4 A, P_OUT = 65 W
40
-5
Efficiency
35
30
-10
RL
25
20
-15
Gain
15
10
2580
2600
2620 2640 2660
Frequency (MHz)
2680
-20
2700
3-Carrier CDMA2000 Performance
V_DD = 28 V, I_DQ = 1.4 A, ƒ = 2680 MHz
60
-40
50 _{ACP, 25°C} ALT, 25°C
-45
40
-50
ALT, 90°C
30
ACP, 90°C
20
10
0
35
38
-55
Efficiency, _-60
25°C
-65
Efficiency, 90°C
-70
41
44
47
50
Output Power, Avg. (dBm)
Data Sheet
5 of 12
Rev. 07, 2007-04-04