PTFA261301E Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz

PTFA261301E
PTFA261301F
Thermally-Enhanced High Power RF LDMOS FETs
130 W, 2.62 – 2.68 GHz
Description
The PTFA261301E and PTFA261301F are thermally-enhanced 130-watt,
internally-matched GOLDMOS ^® FETs intended for ultra-linear
applications. They are characterized for CDMA, CDMA2000, Super3G
(3GPP TSG RAN), and WiMAX operation from 2620 to 2680 MHz. Full
gold metallization ensures excellent device lifetime and reliability.
PTFA261301E
Package H-30260-2
3-Carrier CDMA2000 Performance
at 28 Volts
I_DQ = 1.4 A, ƒ = 2680 MHz
-10
30
Efficiency
-20
25
-30
20
-40
Alt2
15
Alt
-50
10
-60
ACPR 5
-70
0
0
5 10 15 20 25 30 35
Output Power, avg. (W)
PTFA261301F
Package H-31260-2
Features
• Thermally-enhanced, Pb-free packages,
RoHS-compliant
• Broadband internal matching
• Typical CDMA performance at 2.68 GHz
- Average output power = 26 W
- Linear Gain = 13 dB
- Efficiency = 24%
• Typical CW performance, 2680 MHz, 28 V
- Output power at P–1dB = 152 W
- Efficiency = 47%
• Integrated ESD protection: Human Body
Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 130
W (CW) output power
RF Performance
CDMA IS-95 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.4 A, P_OUT = 26 W average, ƒ = 2680 MHz
Characteristic
Symbol Min Typ
Max
Unit
Adjacent Channel Power Ratio
ACPR
—
–45
—
dBc
Gain
Drain Efficiency
G_ps
—
13
—
dB
η_D
—
24
—
%
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 07, 2007-04-04