PTFA261301E Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz

Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
2590
2620
2650
2680
2710
Z Source W
R
jX
6.7
0.45
5.8
–0.1
5.8
0.4
6.3
0.3
5.4
0.3
Z Load W
R
jX
1.6
–2.7
1.5
–2.8
1.4
–3.0
1.5
–3.4
1.3
–3.7
See next page for circuit information
PTFA261301E
PTFA261301F
Z₀ = 50 Ω
Z Source
2710 MHz
Z Load
2590 MHz
2590 MHz
2710 MHz
0.1
0.2
Data Sheet
7 of 12
Rev. 07, 2007-04-04