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PTFA261301E Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
PTFA261301E
PTFA261301F
Reference Circuit
C1
0.001µ F
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C0.2001µ F
C0.3001µ F
R2K3 V
R2K4 V
R5.51K V
C4
10µF
35V
R6
10V
C5
0.1µF
R57.1K V
C6
4.5pF l5
R F_IN
4C.85pF
l1
l2
C7
l4
0.7pF
DUT
l3 l 6 l7
C1.90pF
L1
C10
C11
4.5pF
1µF
VDD
C12
C13
0.1µF 10µF
50V
l8
l10 l11 l12
l9
C19
4.5pF
l13
l14
C18
0.5pF
L2
R F_OUT
C14
C15
4.5pF
1µF
C16
0.1µF
C17
10µF
50V
Reference circuit schematic for ƒ = 2680 MHz
Circuit Assembly Information
DUT
PCB
PTFA261301E or PTFA261301F
0.76 mm [.030"] thick, εr = 4.5
Microstrip Electrical Characteristics at 2680 MHz1
l1
0.123 λ, 50.0 Ω
l2
0.137 λ, 41.3 Ω
l3
0.018 λ, 41.3 Ω
l4
0.080 λ, 59.0 Ω
l5
0.265 λ, 59.0 Ω
l6
0.022 λ, 14.7 Ω
l7
0.090 λ, 8.0 Ω
l8, l9
0.250 λ, 55.0 Ω
l10
0.056 λ, 4.8 Ω
l11 (taper)
0.117 λ, 4.8 Ω / 50.0 Ω
l12
0.036 λ, 50.0 Ω
l13
0.113 λ, 50.0 Ω
l14
0.057 λ, 50.0 Ω
1Electrical characteristics are rounded.
LDMOS Transistor
Rogers TMM4
2 oz. copper
Dimensions: L x W (mm)
7.47 x 1.47
8.18 x 1.91
1.09 x 1.91
4.95 x 1.02
16.33 x 1.02
1.22 x 7.62
4.88 x 15.24
15.37 x 1.17
3.35 x 29.85
6.35 x 29.85 / 1.42
2.16 x 1.42
6.86 x 1.42
3.48 x 1.42
Dimensions: L x W (in.)
0.294 x 0.058
0.322 x 0.075
0.043 x 0.075
0.195 x 0.040
0.643 x 0.040
0.048 x 0.300
0.192 x 0.600
0.605 x 0.046
0.132 x 1.175
0.250 x 1.175 / 0.056
0.085 x 0.056
0.270 x 0.056
0.137 x 0.056
Data Sheet
8 of 12
Rev. 07, 2007-04-04