PTFA260851E Datasheet, PDF (9/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz

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Package Outline Specifications
Package H-30248-2
PTFA260851E
PTFA260851F
(45° X 2.72
[.107])
CL
D
4.83±0.51
[.190±.020]
S
FLANGE 9.78
[.385] _{LID 9.40+–00..1105 CL}
19.43 ±0.51
[.765±.020]
[.370^{+–..000064} ]
G
2X 12.70
[.500]
27.94
[1.100]
2X R1.63
[R.064]
4X R1.52
[R.060]
1.02
[.040]
19.81±0.20
[.780±.008]
CL
SPH 1.57
[.062]
0.0381 [.0015] -A-
34.04
[1.340]
3.61±0.38
[.142±.015]
2 4 8 c-a se sh: -3 0 2 4 8 -2 _ p o _ 9 -F -0 8
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
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Data Sheet
9 of 11
Rev. 02.1, 2009-02-20