PTFA260851E Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two–tone Performance, various voltages
I_DQ = 900 mA, ƒ = 2.68 GHz, tone spacing = 1 MHz
17
V_DD = 26 V
16
V_DD = 28 V
V_DD = 32 V
15
Gain
14
50
Efficiency
40
30
20
13
10
12
0
25
30
35
40
45
50
Output Power (dBm)
PTFA260851E
PTFA260851F
3-Carrier CDMA2000 Performance,
various voltages
I_DQ = 900 mA, ƒ = 2.68 GHz, PAR = 7 dB
40
V_DD = 26 V
30
V_DD = 28 V
V_DD = 32 V
16
Efficiency
15
20
14
Gain
10
13
0
12
30
35
40
45
50
Output Power (dBm)
3-Carrier CDMA2000 Performance
Adjacent Channel Power Ratio
V_DD = 28 V, I_DQ = 900 m A, ƒ = 2.68 GHz, PAR = 7 dB
-30
-40
Alt₂ 2.5 MHz
-50
-60 ^{Adj 35 MHz}
-70
Alt₁ 2.5 MHz
-80
25
30
35
40
45
50
Output Power (dBm)
WCDMA 3GPP Single-carrier Performance,
various voltages
I_DQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB
40
V_DD = 26 V
16
V_DD = 28 V
V_DD = 32 V
30
15
20 _Gain
10
Efficiency
0
25
30
35
40
Output Power (dBm)
14
13
12
45
Data Sheet
4 of 11
Rev. 02.1, 2009-02-20