PTFA260851E Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
85 W, 2500 – 2700 MHz
PTFA260851E
PTFA260851F
Description
The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs
designed for WiMAX power amplifier applications in the 2500 to
2700 MHz band. Features include input and output matching, and
thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA260851E
Package H-30248-2
PTFA260851F
Package H-31248-2
WiMAX
EVM and Efficiency vs. Output Power
V_DS = 28 V, I_DQ = 900 mA
25
-20
2.62
20
GHz
2.68
-25
GHz
Efficiency
15
2.62
-30
10
-35
EVM
5
-40
0
-45
15 20 25 30 35 40 45
Output Power (dBm)
Features
• Thermally-enhanced, Pb-free and RoHS-compli-
ant packages
• Broadband internal matching
• Typical WiMAX performance at 2680 MHz, 28 V
- Average output power = 16 W
- Linear Gain = 14 dB
- Efficiency = 22%
- Error Vector Magnitude = –29 dB
• Typical CW performance, 2680 MHz, 28 V
- Output power at P–1dB = 100 W
- Efficiency = 47%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
85 W (CW) output power
RF Characteristics
WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 16 W average, ƒ = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz
Characteristic
Gain
Drain Efficiency
Error Vector Magnitude
Symbol Min Typ
G_ps
—
14
η_D
EVM
—
22
—
–29
Max
—
—
—
Unit
dB
%
dB
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 02.1, 2009-02-20