PTFA260851E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFA260851E
PTFA260851F
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 900 mA, ƒ = 2.68 GHz
16
15
14
Gain
13
12
11 Efficiency
10
25
30 35 40 45 50
Output Power (dBm)
60
50
40
30
20
10
0
55
Two–tone Broadband Performance
V_DD = 28 V, I_DQ = 900 mA, P_OUT = 42.5 W
-20
3rd Order
-30
-40
5th
-50
7th
-60
2580 2600 2620 2640 2660 2680 2700 2720
Frequency (MHz)
Two–tone Broadband Performance
V_DD = 28 V, I_DQ = 900 m A, P_OUT = 42.5 W
20
Gain
10
0
-10
Input Return Loss
-20
-30
2590 2610 2630 2650
50
45
40
35
Efficiency ₃₀
25
20
15
10
5
0
2670 2690 2710
Frequency (MHz)
Two–tone Performance, various voltages
I_DQ = 900 m A, ƒ = 2.68 GHz, tone spacing = 1 MHz
-20
V_DD = 26 V
-25
V_DD = 28 V
-30
V_DD = 32 V
-35
-40
IM3
-45
-50 IM5
-55
-60
IM7
-65
25
30
35
40
45
50
Output Power (dBm)
Data Sheet
3 of 11
Rev. 02.1, 2009-02-20