PTFA260851E Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
WCDMA 3GPP Single-carrier Performance
I_DQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB
-30
-35
-40
-45 ^{32 V}
28 V
-50
26 V
-55
25
30
35
40
45
50
Output Power (dBm)
PTFA260851E
PTFA260851F
WCDMA 3GPP 2-carrier Performance,
various voltages
I_DQ = 900 mA, ƒ = 2.68 GHz, PAR = 8 dB,
10 MHz spacing
-30
ACPR
-35
IMD 3
-40
32 V
-45
-50
26 V
28 V
-55
25
30
35
40
45
Output Power (dBm)
WCDMA 3GPP 2-carrier Performance
V_DD = 28 V & 32 V, I_DQ = 900 mA, ƒ = 2.68 GHz,
PAR = 8 dB, 10 MHz spacing
40
16
V_DD = 28 V
30
V_DD = 32 V
15
Gain
20
14
10
Efficiency
0
25
30
35
40
Output Power (dBm)
13
12
45
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.19 A
0.56 A
0.93 A
1.39 A
2.78 A
4.17 A
5.56 A
6.95 A
8.34 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 02.1, 2009-02-20