PTFA260851E Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 – 2700 MHz

Confidential, Limited Internal Distribution
Reference Circuit
PTFA260851E
PTFA260851F
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0 .0 0 1 µ F
C3
0.001µF
R3
2K V
R4
2K V
RF_IN
R5
5.1K V
C4
10µF
35V
R6
10 V
C5
R7
0.01µF 5.1K V
C6
4.5pF ^l7
R8
10 V
C7
4.5pF
l1
l2
l6
l3 l4
l5
C8
1.5pF
L1
VDD
C9
C10
C11
C12
4.5pF
1µF
0.01µF
10µF
50V
l8
DUT
l10
l11
l1 2
l9
L2
C18
4 .5 p F
l13
l14
C17
0.1pF
C13
C14
4.5pF 1µF
C15
0 .0 1 µ F
C16
10µF
50V
RF_OUT
a260851ef_bd_2-1-08
Reference circuit schematic for ƒ = 2650 MHz
Circuit Assembly Information
DUT
PCB
PTFA260851E or PTFA260851F
ε 0.76 mm [.030"] thick, _r = 4.5
LDMOS Transistor
TMM4
2 oz. copper
Microstrip Electrical Characteristics at 2650 MHz¹
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
l11 (taper)
l12
l13
l14
0.121 λ, 46.9 Ω
0.135 λ, 40.5 Ω
0.021 λ, 40.5 Ω
0.028 λ, 14.7 Ω
0.079 λ, 8.3 Ω
0.008 λ, 57.9 Ω
0.272 λ, 57.9 Ω
0.278 λ, 49.3 Ω
0.278 λ, 49.3 Ω
0.060 λ, 5.2 Ω
0.113 λ, 5.2 Ω / 49.3 Ω
0.048 λ, 49.3 Ω
0.095 λ, 49.3 Ω
0.070 λ, 49.3 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W ( mm)
7.42 x 1.52
8.20 x 1.93
1.27 x 1.93
1.60 x 7.54
4.37 x 14.66
0.51 x 1.04
16.79 x 1.04
16.89 x 1.40
16.89 x 1.40
3.28 x 24.36
6.73 x 24.36 / 1.40
2.97 x 1.40
5.84 x 1.40
4.29 x 1.40
Dimensions: L x W (in.)
0.292 x 0.060
0.323 x 0.076
0.050 x 0.076
0.063 x 0.297
0.172 x 0.577
0.020 x 0.041
0.661 x 0.041
0.665 x 0.055
0.665 x 0.055
0.129 x 0.959
0.265 x 0.959 / 0.055
0.117 x 0.055
0.230 x 0.055
0.169 x 0.055
Data Sheet
7 of 11
Rev. 02.1, 2009-02-20