PTFA192001E_15 Datasheet, PDF (9/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

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Package Outline Specifications
Package H-36260-2
PTFA192001E
PTFA192001F
45° X 2.03
[.080]
2X 12.70
[.500]
CL
4X R 1.52
[R.060]
4.83±0.50
[.190±.020]
LID
13.21
+0.10
–0.15
[.520 ^{+–..000064}]
CL
D
S
design FLANGE 13.72
G
for ^new
[.540]
2X R1.63
[R.064]
23.37±0.51
[.920±.020]
SPH 1.57
[.062]
d _27.94
[1.100]
nde _{22.35±0.23}
e^{[.880±.009]}
m ^CL
not ^{recom 1.02}
[.040]
34.04
[1.340]
4.11±0.38
[.162±.015]
0.0381 [.0015] -A-
h -36+ 37260-2_36260 / 04-25-08
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5. All tolerances ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
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http://www.infineon.com/rfpower
Data Sheet
9 of 11
Rev. 07, 2015-03-04