PTFA192001E_15 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Confidential, Limited Internal Distribution
Typical Performance (cont.)
PTFA192001E
PTFA192001F
Output Peak-to-Average Ratio Compression
Power Gain vs. Power Sweep (CW) over
(PARC) at various Power levels
Temperature
V_DD = 30 V, I_DQ = 1500 m A, ƒ = 1990 MHz,
V_DD = 30 V, I_DQ = 1500 m A, ƒ = 1990 MHz
single-carrier WCDMA input PAR = 7.5 dB
100
18
10
1
48 dBm
0.1 ^{52 dBm}
50.5 dBm
0.01
50 dBm
46 dBm
Input
0.001
1
2
3
4
5
6
7
8
Peak-to-Average (dB)
17 ^-15C
25C
16
15 ^85C
design
14
w ₁₃
ne 12
for¹
10
100
Output Power (W)
1000
nded _{Voltage Sweep}
e _{IDQ = 1800 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,}
m Output Power (PEP) = 53 dBm
m -10
50
eco ^-20
40
r _Efficiency
not ^-30
IM3 Up
30
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
-40
20
0.97
16.52 A
Gain
-50
10
23
25
27
29
31
33
0.96
0.95
-20
0
20 40 60 80 100
Case Temperature (°C)
Supply Voltage (V)
Data Sheet
5 of 11
Rev. 07, 2015-03-04