PTFA192001E_15 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.8 A, P_OUT = 50 W average
ƒ₁ = 1985 MHz, ƒ₂ = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
G_ps
15.3 15.9
—
dB
design ^{Drain Efficiency}
Intermodulation Distortion
η_D
26.5
27
—
%
IMD
—
–36
–34
dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.6 A, P_OUT = 200 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz
w ^{Characteristic}
e _Gain
n _{Drain Efficiency}
for ^{Intermodulation Distortion}
d _{DC Characteristics}
de _{Characteristic}
en ^{Drain-Source Breakdown Voltage}
m ^{Drain Leakage Current}
m ^{Drain Leakage Current}
o _{On-State Resistance}
ec Operating Gate Voltage
r _{Gate Leakage Current}
not Maximum Ratings
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 1.8 A
V_GS = 10 V, V_DS = 0 V
Symbol Min
G_ps
—
η_D
—
IMD
—
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.0
—
Typ
15.9
41
–30
Typ
—
—
—
0.05
2.5
—
Max
—
—
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
dB
%
dBc
Unit
V
µA
µA
Ω
V
µA
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 200 W CW)
Data Sheet
Symbol
V_DSS
V_GS
T_J
P_D
2 of 11
T_STG
R_θJC
Value
65
–0.5 to +12
Unit
V
V
200
°C
625
W
3.57
–40 to +150
W/°C
°C
0.28
°C/W
Rev. 07, 2015-03-04