PTFA192001E_15 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Confidential, Limited Internal Distribution
Ordering Information
PTFA192001E
PTFA192001F
Type and Version
PTFA192001E V4
PTFA192001F V4
Package Type
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA192001E
PTFA192001F
Typical Performance (data taken in a production test fixture)
Intermodulation Distortion Products v. Output Power
V_DD = 30 V, I_DQ = 1600 mA,
design ^{Broadband Performance}
V_DD = 30 V, I_DQ = 1600 mA, P_OUT = 50 W
ƒ₁ = 1957.5 MHz, ƒ₂ = 1962.5 MHz
-20
Up
Low
-30
IM3
IM5
w ₄₀
ne 35
for³⁰
Return Loss
-5
-10
-15
-40
-50
-60
10
IM7
100
men^{100d0 ed}
25 _Efficiency
20
15
Gain
10
1860 1890
1920
1950
1980
2010
-20
-25
-30
-35
2040
not ^{recom Output Power, PEP (W)}
Frequency (MHz)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 07, 2015-03-04