PTFA192001E_15 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Confidential, Limited Internal Distribution
Reference Circuit
PTFA192001E
PTFA192001F
VDD
2K V 2K V 2K V
R5 R8 R3
LM7805
QQ1
0.001µF
0.001µF
C1
C3
C0.0201µF
1.2K V
R1
B C P56
Q1
1.3K V
R2
C4
4.7µF
16V
R6
5.1K V
C5
0.1µF
C6
10pF
L1
C11
C12 ^C13
10pF 1µF 1µF
C14
2.2µF
design C15
0.1µF
C16
10µF
50V
VDD
d ^{for new RF_IN}
l7
C7
10pF
l1
l2
l3
l4 l5
l6
C8
4.7µF
16V
l8
R7
5.1K V
C9
0.1µF
C10
10pF
l9
DUT
C23
0.7pF
l11
l12
l13
C25
0.7pF
l14
l15
C28
10pF
l16
l17
C24
l10
0.7pF
C26
0.7pF
L2
C27
0.7pF
C17 C18 C19
10pF 1µF 1µF
C20
2.2µF
C21
0.1µF
C22
10µF
50V
RF_OUT
nde _{Reference circuit schematic for ƒ = 1960 MHz}
e _{Circuit Assembly Information}
m _DUT
PTFA192001E or PTFA192001F
m PCB
0.76 mm [.030"] thick, εr = 3.48
LDMOS Transistor
Rogers RO4350
1 oz. copper
co _Microstrip
e _l1
r _l2
t _l3
no ^{l4 (taper)}
Electrical Characteristics at 1960 MHz¹
0.038 λ, 50.0 Ω
0.071 λ, 50.0 Ω
0.022 λ, 43.0 Ω
0.060 λ, 43.0 Ω / 6.9 Ω
Dimensions: L x W ( mm)
3.51 x 1.70
6.60 x 1.70
2.01 x 2.16
5.28 x 2.16 / 20.32
Dimensions: L x W (in.)
0.138 x 0.067
0.260 x 0.067
0.079 x 0.085
0.208 x 0.085 / 0.800
l5
0.040 λ, 6.9 Ω
3.33 x 20.32
0.131 x 0.800
l6
0.026 λ, 6.9 Ω
2.21 x 20.32
0.087 x 0.800
l7, l8
0.123 λ, 60.0 Ω
11.48 x 1.24
0.452 x 0.049
l9, l10
0.258 λ, 50.9 Ω
23.88 x 1.65
0.940 x 0.065
l11
0.067 λ, 5.0 Ω
5.59 x 28.91
0.220 x 1.138
l12 (taper)
0.017 λ, 5.0 Ω / 7.2 Ω
1.42 x 28.91 / 19.51
0.056 x 1.138 / 0.768
l13 (taper)
0.024 λ, 7.2 Ω / 12.3 Ω
2.08 x 19.51 / 10.67
0.082 x 0.768 / 0.420
l14 (taper)
0.019 λ, 12.3 Ω / 41 Ω
1.78 x 10.67 / 2.29
0.070 x 0.420 / 0.090
l15
0.009 λ, 41.0 Ω
0.79 x 2.29
0.031 x 0.090
l16
0.021 λ, 41.0 Ω
1.85 x 2.29
0.073 x 0.090
l17
0.096 λ, 50.0 Ω
8.99 x 1.70
0.354 x 0.067
1_{Electrical characteristics are rounded.}
Data Sheet
7 of 11
Rev. 07, 2015-03-04