PTFA192001E_15 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Confidential, Limited Internal Distribution
Typical Performance (cont.)
PTFA192001E
PTFA192001F
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 1800 mA, ƒ = 1990 MHz
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 30 V I_DQ = 1800 m A , ƒ = 1960 MHz,
P_OUT = 53 dBm PEP
17
65
-20
16
Gain
15
14
55
45
35
-25
-30
3rd Order
-35
-40
des^5tihgn
13
12
0
-25
-30
-35
-40
-45
T_CASE = 25°C
25
w _{Efficiency TCASE = 90°C}
ne ¹⁵
40 80 120 160 200 240
for ^{Output Power (W)}
-45
-50
-55
0
7th
5 10 15 20 25 30 35 40
Tone Spacing (MHz)
ended 2-Tone Drive-up
V_DD = 30 V, I_DQ = 1600 m A,
m _{ƒ = 1960 MHz, tone spacing = 1 MHz}
ecom _Efficiency
not ^{r IM3}
45
40
35
IM5 ³⁰
25
Two-carrier WCDMA at Selected Biases
V_DD = 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-30
2.2 A
-35
2.0 A
1.8 A
-40
-45
-50
IM7 ₂₀
1.4 A
-55
-50
15
1.6 A
-60
42
44 46 48 50 52 54
Output Power, PEP (dBm)
10
56
-55
34
36
38
40
42
44
46
Output Power, PEP (dBm)
Data Sheet
4 of 11
Rev. 07, 2015-03-04