IKZ75N65NH5 Datasheet, PDF (9/16 Pages) Infineon Technologies AG – Plug and play replacement of previous generation IGBTs

1000
td(off)
tf
td(on)
tr
100
IKZ75N65NH5
Highspeedseriesfifthgeneration
1000
100
10
10
1
0
10
20
30
40
50
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=37.5A,VDmax≤650V,dynamic
test circuit in Figure E)
td(off)
tf
td(on)
tr
1
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=37.5A,RG(on)=27Ω,RG(off)=22Ω,dynamic
test circuit in Figure E)
6.0
typ.
5.5
min.
max.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
9
Eoff
Eon
8
Ets
7
6
5
4
3
2
1
1.0
25
50
75
100
125
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
0 25 50 75 100 125 150 175 200 225
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature
functionofcollectorcurrent
(IC=0.75mA)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=27Ω,RG(off)=22Ω,
dynamic test circuit in Figure E)
9
Rev.2.1,2014-10-31