IKZ75N65NH5 Datasheet, PDF (4/16 Pages) Infineon Technologies AG – Plug and play replacement of previous generation IGBTs

IKZ75N65NH5
Highspeedseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs¹⁾
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax1)
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tvj
Tstg
Value
Unit
650
V
90.0
A
75.0
300.0
A
300.0
A
95.0
A
73.0
219.0
A
±20
±30
V
395.0
197.0
W
-40...+175
°C
-55...+150
°C
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.38
K/W
0.46
K/W
40
K/W
1) _{Defined by design. Not subject to production test.}
4
Rev.2.1,2014-10-31