IKZ75N65NH5 Datasheet, PDF (6/16 Pages) Infineon Technologies AG – Plug and play replacement of previous generation IGBTs

IKZ75N65NH5
Highspeedseriesfifthgeneration
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=37.5A,
diF/dt=1500A/µs
-
59
- ns
- 0.57 - µC
- 26.0 - A
- -3580 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=27.0Ω,RG(off)=22.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
48
- ns
-
23
- ns
- 468 - ns
-
17
- ns
- 1.28 - mJ
- 0.54 - mJ
- 1.82 - mJ
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=150°C,
VR=400V,
IF=37.5A,
diF/dt=1500A/µs
-
41
- ns
- 1.23 - µC
- 37.0 - A
- -8080 - A/µs
6
Rev.2.1,2014-10-31