IKZ75N65NH5 Datasheet, PDF (5/16 Pages) Infineon Technologies AG – Plug and play replacement of previous generation IGBTs

IKZ75N65NH5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
IGES
Transconductance
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
VGE=0V,IF=75.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
IC=0.75mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=75.0A
Value
Unit
min. typ. max.
650 -
-V
-
-
1.65 2.10
1.82 -
V
- 1.90 -
-
-
1.60 2.20
1.65 -
V
- 1.65 -
3.2 4.0 4.8 V
-
- 75.0 µA
- 3300.0 -
-
- 100 nA
- 104.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance¹⁾
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes
VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=75.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 4300 -
- 130 - pF
-
16
-
- 166.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=37.5A,
VGE=0.0/15.0V,
RG(on)=27.0Ω,RG(off)=22.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
52
- ns
-
19
- ns
- 412 - ns
-
19
- ns
- 0.88 - mJ
- 0.52 - mJ
- 1.40 - mJ
1) _{The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.}
5
Rev.2.1,2014-10-31