IKZ75N65NH5 Datasheet, PDF (10/16 Pages) Infineon Technologies AG – Plug and play replacement of previous generation IGBTs

IKZ75N65NH5
Highspeedseriesfifthgeneration
3.0
Eoff
Eon
Ets
2.5
2.0
Eoff
1.8
Eon
Ets
1.6
1.4
2.0
1.2
1.5
1.0
0.8
1.0
0.6
0.4
0.5
0.2
0.0
0
10
20
30
40
50
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=37.5A,VDmax≤650V,dynamic
test circuit in Figure E)
0.0
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=37.5A,RG(on)=27Ω,RG(off)=22Ω,dynamic
test circuit in Figure E)
2.00
Eoff
Eon
1.75
Ets
16
VCE = 130V
VCE = 520V
14
1.50
12
1.25
10
1.00
8
0.75
6
0.50
4
0.25
2
0.00
200
250
300
350
400
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
0 20 40 60 80 100 120 140 160 180
QG,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=37.5A,RG(on)=27Ω,RG(off)=22Ω,dynamic
test circuit in Figure E)
Figure 16. Typicalgatecharge
(IC=75A)
10
Rev.2.1,2014-10-31