IKZ75N65NH5 Datasheet, PDF (11/16 Pages) Infineon Technologies AG – Plug and play replacement of previous generation IGBTs

IKZ75N65NH5
Highspeedseriesfifthgeneration
1E+4
Cies
Coes
Cres
1000
100
D = 0.5
0.1
0.2
0.1
0.05
0.02
0.01
single pulse
0.01
10
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i:
1
2
3
4
5
6
ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3
τi[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237
1E-5
1E-4 0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
80
Tvj = 25°C, IF = 37.5A
Tvj = 150°C, IF = 37.5A
70
60
50
40
30
20
i:
1
2
3
4
5
6
7
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3
τi[s]: 1.0E-5 3.0E-5 2.2E-4 2.2E-3 0.01247 0.10291 1.85641
0.001
1E-6
1E-5
1E-4 0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
10
0
1000
1500
2000
2500
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
11
Rev.2.1,2014-10-31