IKP20N60TA Datasheet, PDF (9/14 Pages) Infineon Technologies AG – IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

TrenchStop^® Series
IKP20N60T
IKW20N60T
D=0.5
0.2
10^-1K/W ^0.1
0.05
10^-2K/W
0.02
R,(K/W)
0.18715
0.31990
0.30709
0.07041
R1
, (s)
6.925*10^-2
1.085*10^-2
6.791*10^-4
9.59*10^-5
R2
0.01
C1=1/R1 C2=2/R2
single pulse
1µs 10µs 100µs 1ms 10ms 100ms
t_P, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = t_p / T)
10⁰K/W _D=0.5
1 0 ^-1K /W
0.2
R,(K/W) , (s)
0.13483
9.207*10^-2 6.53*10
0.1
0.58146
0.44456
1.821*10^-2
1.47*10^-3
0.33997
1.254*10^-4
0.05 ^R1
R2
0.02
0.01
C1=1/R1 C2=2/R2
single pulse
1 0 ^-2K /W
1µs 10µs 100µs 1ms 10ms 100ms
t_P, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=t_P/T)
250ns
200ns
150ns
100ns
T_J=175°C
50ns
T_J=25°C
0ns
600A/µs
900A/µs
1200A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V_R=400V, I_F=20A,
Dynamic test circuit in Figure E)
1.8µC
1.6µC
1.4µC
T_J=175°C
1.2µC
1.0µC
0.8µC
0.6µC
T_J=25°C
0.4µC
0.2µC
600A/µs
900A/µs
1200A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(V_R = 400V, I_F = 20A,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
9
Rev. 2.6 12.06.2013