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| IKP20N60TA Datasheet, PDF (8/14 Pages) Infineon Technologies AG – IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode | |||
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TrenchStop® Series
IKP20N60T
IKW20N60T
15V
120V
480V
10V
5V
0 V0 n C
30nC 60nC 90nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=20 A)
120nC
1nF
C iss
100pF
C oss
C rss
10pF
0V
10V 20V 30V 40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
300A
250A
200A
150A
100A
50A
0 A1 2 V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ï£ 400V, Tj ï£ 150ï°C)
12µs
10µs
8µs
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
IFAG IPC TD VLS
8
Rev. 2.6 12.06.2013
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