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| IKP20N60TA Datasheet, PDF (2/14 Pages) Infineon Technologies AG – IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode | |||
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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction â case
Diode thermal resistance,
junction â case
Thermal resistance,
junction â ambient
TrenchStop® Series
IKP20N60T
IKW20N60T
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
Unit
0.9
K/W
1.5
62
40
Electrical Characteristic, at Tj = 25 ï°C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.2mA
VGE = 15V, IC=20A
Tj=25ï°C
Tj=175ï°C
VGE=0V, IF=20A
Tj=25ï°C
Tj=175ï°C
IC=290µA,VCE=VGE
VCE=600V,
VGE=0V
Tj=25ï°C
Tj=175ï°C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=20A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
Typ.
-
1.5
1.9
1.65
1.6
4.9
-
-
-
11
-
Unit
max.
-V
2.05
-
2.05
-
5.7
µA
40
1000
100 nA
-S
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
Output capacitance
Coss
VGE=0V,
-
Reverse transfer capacitance
Crss
f=1MHz
-
Gate charge
QGate
VCC=480V, IC=20A
-
VGE=15V
Internal emitter inductance
LE
TO-247-3-21
-
measured 5mm (0.197 in.) from case
TO-220-3-1
Short circuit collector current1)
IC(SC)
VGE=15V,tSCï£5ïs
-
VCC = 400V,
T j ï£ 150ï°C
1100
71
32
120
13
7
183.3
- pF
-
-
- nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L ï³ a nd Stray capacity C ï³ due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
2
Rev. 2.6 12.06.2013
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