IKP20N60TA Datasheet, PDF (7/14 Pages) Infineon Technologies AG – IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

TrenchStop^® Series
IKP20N60T
IKW20N60T
2.4mJ
*) E_on and E_ts include losses
due to diode recovery
E_ts*
2.0mJ
1.6mJ
1.2mJ
0.8mJ
E_off
0.4mJ
0.0mJ
0A
E_on*
5A 10A 15A 20A 25A 30A 35A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, R_G = 12Ω,
Dynamic test circuit in Figure E)
2.4m J ^{*) Eon and Ets include losses}
due to diode recovery
E _ts*
2.0m J
1.6m J
E _off
1.2m J
0.8m J
0.4m J
E _on*
0.0m J





R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, I_C = 20A,
Dynamic test circuit in Figure E)
*) E_on and E_ts include losses
due to diode recovery
1.0mJ
E_ts*
0.8mJ
0.6mJ
E_off
0.4mJ
E_on*
0.2mJ
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE = 400V,
V_GE = 0/15V, I_C = 20A, R_G = 12Ω,
Dynamic test circuit in Figure E)
2.0m J
1.8m J
1.6m J
*) E_on and E_ts include losses
due to diode recovery
1.4m J
1.2m J
1.0m J ^Ets^*
0.8m J
E _off
0.6m J
0.4m J
0.2m J
E_on*
0.0m J
300V 350V 400V 450V 500V 550V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T_J = 175°C,
V_GE = 0/15V, I_C = 20A, R_G = 12Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
7
Rev. 2.6 12.06.2013