IKP20N60TA Datasheet, PDF (3/14 Pages) Infineon Technologies AG – IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

TrenchStop^® Series
IKP20N60T
IKW20N60T
Switching Characteristic, Inductive Load, at T_j=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
Q_rr
I_rrm
di_rr/dt
T_j=25C,
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G=12 ,
L_²⁾=131nH,
C_²⁾=31pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25C,
V_R=400V, I_F=20A,
di_F/dt=880A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
18
14
199
42
0.31
0.46
0.77
41
0.31
13.3
711
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
Switching Characteristic, Inductive Load, at T_j=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
Q_rr
I_rrm
di_rr/dt
T_j=175C,
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G= 12 
L_¹⁾=131nH,
C_¹⁾=31pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=175C
V_R=400V, I_F=20A,
di_F/dt=880A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
18
18
223
76
0.51
0.64
1.15
176
1.46
18.9
467
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
1) _{Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E.}
IFAG IPC TD VLS
3
Rev. 2.6 12.06.2013