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IKP20N60TA Datasheet, PDF (5/14 Pages) Infineon Technologies AG – IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
TrenchStop® Series
IKP20N60T
IKW20N60T
50A
40A
VGE=20V
15V
13V
30A
11V
9V
20A
7V
10A
0A
0V
1V
2V
3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
50A
VGE=20V
40A
15V
13V
30A
11V
9V
20A
7V
10A
0A
0V
1V
2V
3V
4V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
35A
30A
25A
20A
15A
10A
5A
T =175°C
J
25°C
0A
0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
2.5V
2.0V
IC=40A
1.5V
1.0V
IC=20A
IC=10A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IFAG IPC TD VLS
5
Rev. 2.6 12.06.2013