IKP20N60H3 Datasheet, PDF (9/16 Pages) Infineon Technologies AG – High speed IGBT in Trench and Fieldstop technology

100
td(off)
tf
td(on)
tr
IKP20N60H3
Highspeedswitchingseriesthirdgeneration
1000
td(off)
tf
td(on)
tr
100
10
0 5 10 15 20 25 30 35 40
IC,COLLECTORCURRENT[A]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
10
5
10 15 20 25 30 35 40 45 50
rG,GATERESISTOR[Ω]
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=20A,testcircuitinFig.E)
100
td(off)
tf
td(on)
tr
6.0
typ.
min.
5.5
max.
5.0
4.5
4.0
10
3.5
3.0
2.5
1
25
50
75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C]
2.0
0
25 50 75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.29mA)
9
Rev.2.2,2014-03-12