IKP20N60H3 Datasheet, PDF (4/16 Pages) Infineon Technologies AG – High speed IGBT in Trench and Fieldstop technology

IKP20N60H3
Highspeedswitchingseriesthirdgeneration
Maximumratings
Parameter
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Gate-emitter voltage
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tvj
Tstg
M
Value
Unit
600
V
40.0
A
20.0
80.0
A
80.0
A
20.0
A
10.0
80.0
A
±20
V
µs
5
170.0
85.0
W
-40...+175
°C
-55...+150
°C
260
°C
0.6
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.88
K/W
1.89
K/W
62
K/W
4
Rev.2.2,2014-03-12