IKP20N60H3 Datasheet, PDF (6/16 Pages) Infineon Technologies AG – High speed IGBT in Trench and Fieldstop technology

IKP20N60H3
Highspeedswitchingseriesthirdgeneration
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs
Value
Unit
min. typ. max.
-
16
- ns
-
20
- ns
- 194 - ns
-
11
- ns
- 0.45 - mJ
- 0.24 - mJ
- 0.69 - mJ
- 112 - ns
- 0.39 - µC
- 11.0 - A
- -750 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=175°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=175°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs
Value
Unit
min. typ. max.
-
16
- ns
-
15
- ns
- 227 - ns
-
14
- ns
- 0.60 - mJ
- 0.36 - mJ
- 0.96 - mJ
- 191 - ns
- 0.91 - µC
- 14.2 - A
- -500 - A/µs
6
Rev.2.2,2014-03-12