IKP20N60H3 Datasheet, PDF (10/16 Pages) Infineon Technologies AG – High speed IGBT in Trench and Fieldstop technology

IKP20N60H3
Highspeedswitchingseriesthirdgeneration
2.5
Eoff
Eon
Ets
2.0
2.00
Eoff
Eon
1.75
Ets
1.50
1.25
1.5
1.00
1.0
0.75
0.50
0.5
0.25
0.0
4
8 12 16 20 24 28 32 36 40
IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
0.00
5
10 15 20 25 30 35 40 45 50
rG,GATERESISTOR[Ω]
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=20A,testcircuitinFig.E)
1.0
Eoff
Eon
Ets
0.8
1.50
Eoff
Eon
Ets
1.25
1.00
0.6
0.75
0.4
0.50
0.2
0.25
0.0
25
50
75 100 125 150 175
Tj,JUNCTIONTEMPERATURE[°C]
0.00
200
250
300
350
400
450
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=400V,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
10
Rev.2.2,2014-03-12